* -15 A, -120 V, RDS(on) = 0.2 Ω (Max.) @ VGS=-10 V, ID = -7.5 A
* Low Gate Charge (Typ. 29 nC)
* Low Crss (Typ. 110 pF)
* 100% Avalanche Tested
* 175.
Features
* -15 A, -120 V, RDS(on) = 0.2 Ω (Max.) @ VGS=-10 V, ID = -7.5 A
* Low Gate Charge (Typ. 29 nC)
*.
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superi.
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